PART |
Description |
Maker |
IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD HiPerFET Power MOSFETs Q-Class Discrete MOSFETs: HiPerFET Power MOSFETS
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IXYS, Corp. IXYS[IXYS Corporation]
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IXFN80N48 |
Discrete MOSFETs: HiPerFET Power MOSFETS HiPerFET Power MOSFETs Single Die MOSFET
|
IXYS Corporation
|
IXFE39N90 |
HiPerFET Power MOSFETs Single Die MOSFET Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS Corporation
|
IXFNB24N100 IXFNB24N100F IXFN24N100 IXFN24N100F |
HiPerRF Power MOSFETs 24 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET HiPerRF Power MOSFETs F-Class: MegaHertz Switching
|
IXYS, Corp. IXYS Corporation
|
SPI80N03S2L-05 SPP80N03S2L-05 SPB80N03S2L-05 |
80 A, 30 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA OptiMOS Power-Transistor 的OptiMOS功率晶体 Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 4.9mOhm, 80A, LL Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 5.2mOhm, 80A, LL
|
INFINEON[Infineon Technologies AG]
|
IXFR150N15 |
Discrete MOSFETs: HiPerFET Power MOSFETS N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电50V,导通电B>12.5mΩ的N沟道增强型HiPerFET功率MOSFET) N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电50V,导通电2.5mΩ的N沟道增强型HiPerFET功率MOSFET) HiPerFET Power MOSFETs ISOPLUS247
|
IXYS Corporation
|
FMD21-05QC FDM21-05QC |
Q-Class Power MOSFETs MOSFET Modules Q-Class Power MOSFETs 21 A, 500 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET
|
IXYS[IXYS Corporation] IXYS, Corp.
|
IXFH74N20 IXFT74N20 IXFH68N20 IXFT68N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS High Performance, 145 MHz FastFET™ Op Amp; Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 68 A, 200 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
|
IXYS[IXYS Corporation] IXYS, Corp.
|
BUZ902DP BUZ903DP |
N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 220V. N-Channel Power MOSFET For Audio Application(N沟道功率型MOS场效应管(用于音频电路)) N-channel power MOSFET. Power MOSFETs for audio applications. Drain - source voltage 250V.
|
Magnatec
|
MRF9030MBR1 MRF9030MR1 MRF9030M |
MRF9030MR1, MRF9030MBR1 945 MHz, 30 W, 26 V Lateral N-Channel Broadband RF Power MOSFETs The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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MOTOROLA[Motorola, Inc]
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